Preparation of Nb3Ge superconducting tunneling junctions

A procedure in which Auger electron spectroscopy (AES) is used to control barrier thickness has been developed for the fabrication of Nb
3
Ge-Al
2
O
3
-Pb tunneling junctions. Both high-resistance and low-resistance Josephson junctions have been made using this technique. A similar procedure has been used to form junctions of V
3
Si crystals.