Properties of 2 µm bubbles garnet films

2 μm bubbles Ga, Al or (Ca,Ge) substituted (EuLu)
3
Fe
5
O
12
and (YSmLuCa)
3
(FeGe)
5
O
12
garnet films were grown by liquid phase epitaxy on Gd
3
Ga
5
O
12
substrates. The compositions of the films were varied by modifying the composition of the growth solution. The magnetic properties of the films with 1 = 0,27 ± 0,03μm were discussed. The two compositions (EuLuCa)
3
(FeGe)
5
O
12
and (YSmLuCa)
3
(FeGe)
5
O
12
present a sufficient temperature stability from - 20 to + 80°C to be used in memory devices.