Electronic structure of the Ni/sub 2/MnIn/InAs [100] interface relevant to spin injection

The ferromagnet-semiconductor system consisting of the Heusler alloy Ni/sub 2/MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model [100] interface. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the moments and density of states of each atom. We find that the magnetic moments of the Ni/sub 2/MnIn are not killed at the interface. We compare the DOS of Ni/sub 2/MnIn in the interface model with the DOS of the respective bulk material.