Abstract:
A description is given of the setup for quantized Hall effect measurements. Preliminary results, obtained with MOCVD grown GaAs-AIGaAs heterojunctions, are presented. The...Show MoreMetadata
Abstract:
A description is given of the setup for quantized Hall effect measurements. Preliminary results, obtained with MOCVD grown GaAs-AIGaAs heterojunctions, are presented. These include temperature dependence of the quantized Hall resistance. Overall accuracy is estimated to be better than 0.2 ppm.
Published in: IEEE Transactions on Instrumentation and Measurement ( Volume: IM-34, Issue: 2, June 1985)