On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOI

The radio frequency (RF) power-handling capability of forward- and inverse-mode diode-connected SiGe HBT RF switches fabricated on SOI is investigated. Two types of n-p-n SiGe HBTs, each with a different collector doping profile, are used in the ON path of the RF switch. Measured results show that the inverse-mode switches outperform the forward-mode switches in both off-state insertion loss and power handling and compression characteristics. A framework for understanding the differences observed in the distortion performance of the forward- and inverse-mode SiGe HBT switches is developed.