Abstract:
We present an improved methodology for integrated k-value extractions that is based on the use of interconnect schemes with deep hanging low-k trenches and reduced passiv...Show MoreMetadata
Abstract:
We present an improved methodology for integrated k-value extractions that is based on the use of interconnect schemes with deep hanging low-k trenches and reduced passivation as a test vehicle. We perform a rigorous analysis for the calculation of the error bar and the evaluation of the impact of each source of uncertainty. We demonstrate the effectiveness of our methodology in reducing the error bar on the extracted integrated k-value at 90 nm half-pitch and discuss the limitations at narrow pitches.
Published in: IEEE Transactions on Electron Devices ( Volume: 59, Issue: 6, June 2012)