Contents I. Introduction
Organic FIELD-effect transistors (OFETs) have received considerable attention due to their promise for realizing low-cost, lightweight, and flexible electronics applications [1]–[3]. However, a key problem with existing OFETs is their relatively large operating voltage, usually above 20 V, which is too high for wide usual practical applications. A reduction of operating voltage to the range of less than 5 V, which is more usual in electronics, is highly desirable. The operation at low voltages may then allow the use of these OFETs in logic digital circuits required in applications like flexible displays [4], large-area sensors [5], and radio frequency identification [6].
