I. Introduction
Recently, nanowire (NW) transistors have attracted wide attention, and analyses that focus on various aspects of the device operation have accumulated. We have offered a compact modeling of a ballistic Si NW MOSFET [1] based on a simple ballistic MOSFET modeling [2]. However, carrier scattering is the essential feature of quasi-ballistic transport, and its effects must be considered if realistic device properties are concerned. This paper is intended to incorporate scattering effects into the previous ballistic modeling and to provide a compact model of the quasi-ballistic Si NW MOSFET.