Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}$/p-Si Diode

A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich
$\hbox{Al}_{2}\hbox{O}_{3}$
/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at
$-$
25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich
$\hbox{Al}_{2}\hbox{O}_{3}$
layer. The memory exhibited good reading endurance and retention characteristics.