Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

In this brief, we present a detailed study on the temperature dependence of the microwave noise characteristics in AlGaN/GaN high-electron mobility transistors on high-resistivity silicon substrate. The temperature-dependent microwave noise parameters of AlGaN/GaN HEMT on Si were measured over a wide temperature range of -50°C-200°C. The physical mechanisms of the temperature behavior for the overall noise figure (
NF
_min
) and internal noise sources coefficients (
P
,
R
, and
C
) were analyzed and discussed in detail.