High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

For the first time, a high-performance (τ
_PGM
= 200 ns/τ
_ERS
= 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight
V
_TH
distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.