Electron Transport Through Abrupt Type I Double Heterojunction Bipolar Transistors

A model with two unknown parameters predicts the experimental current voltage characteristics of InP/GalnAs/InP double-heterojunction bipolar transistors. The model is based upon the calculation of the tunneling rate through the collector energy barrier. The two unknown parameters, i.e., electron temperature and electron lifetime in the base, are obtained by comparing experimental results and model calculations. The extracted electron temperature in the base ranged between 350 and 400 K, indicating that the energy relaxation times of electrons having energies lower than the longitudinal optical phonon energy are long compared with the electron lifetime.