High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

$hboxTaN/hboxSrTiO_3/hboxTaN$
capacitors with a capacitance density of 28–35
$hboxfF/muhboxm^2$
have been developed by using a high-
$kappa (kappa = hbox147-hbox169) hboxSrTiO_3$
dielectric containing nanometer-sized microcrystals (3–10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using
$hboxN^+$
treatment on the lower TaN electrode during post-deposition annealing. The small (92
$hboxppm/hboxV^2$
) voltage coefficient of the capacitance and the
$hbox3times hbox10^-8 hboxA/hboxcm^2$
leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.