A new technology for epitaxial II-VI compound semiconductor devices

ZnS and ZnSe are grown by metalorganic chemical-vapor deposition over GaAs and GaAlAs chemi-stop layers on a GaAs substrate. The III-V layers allow selective chemical removal of the substrate in order to expose the ZnS. The device allows investigation of the electrical and optical properties of epitaxial wide-gap II-VI compounds in the absence of any influence from the substrate material.