A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation

Hybrid techniques for coupling Monte Carlo and drift-diffusion models for device simulation show excellent promise because of their computational efficiency. We present a rigorous technique for coupling the two models that retains the computational efficiency of the drift-diffusion scheme and the rigor of a Monte Carlo treatment. From regional Monte Carlo simulation, the position'dependent mobility, diffusion coefficient, and the energy-gradient field are evaluated for specific regions of common device structures where transient hot-electron effects are important, These are used in a new technique to couple Monte Carlo and drift-diffusion models for computationally efficient global device simulation.