On the photoresponse of GaAs MESFET's: Backgating and deep traps effect

This work presents certain effects of optical illumination on a GaAs MESFET. The relative roles of the device geometry, hole traps in the channel and backgating are clarified. Experimentally, the optical responsitivity in the range 250 kHz-2.6 GHz is measured. The effects of cw illumination and substrate bias on the device are also examined.