Double-diffusion differential-amplification magnetic sensor

A double-diffused differential-amplification magnetic sensor (D
²
DAMS) composed of a rectangular Hall device and two transistors has been designed and fabricated. The dependence of the output signals on magnetic field was analyzed theoretically. The fabricated D
²
DAMS was found to have magnetic sensitivity of 62 mV/T with load resistance of 10 kΩ when exposed to static magnetic fields. Decreasing the dopant concentration in the Hall region and increasing the resistance between the differential transistor collectors are proposed to improve the sensitivity up to 10 V/T.