A high-frequency bipolar JFET I2L process

A new monolithic process is described which allows simultaneous fabrication of high-speed (
f_{T} = 400
MHz) JFET's, high-frequency (
f_{T} = 4
GHz) bipolar transistors plus I
²
L logic (
t_{d} = 14
ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bipolar transistor with implanted base and emitter.