A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET

A new, simple method to measure the V
T
of an enhancement-mode MOSFET has been developed based on the analytical model of the subthreshold current. V
T
is determined to be the gate voltage at which the I
DS
reaches the constant threshold current, and this method is accurate over a wide range of device dimensions, bias conditions, and operating temperatures.