Simulation of doping processes

Models for the simulation of complex fabrication steps for IC manufacture together with a simulation program are described. Multistep processes including ion implantation, oxidation, diffusion, and etching can be simulated, giving the doping profile, junction depth, and sheet resistivity. The program can also be applied to extract data from experimental results. The models used include the field enhancement of the diffusion together with the vacancy enhancement and the complex retardation for arsenic and boron.