Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET

Molybdenum silicide (MoSi
2
) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi
2
gate technology are to realize a low resistivity of 1 × 10
^-4
Ω . cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250° C. Problems on the ohmic contact between MoSi
2
and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi
2
deposition.