The application of optimization techniques in the study of Schottky-barrier devices

In this paper, we discuss a numerical optimization technique which may be used to study the effect of interface states on the terminal characteristics of Schottky-barrier devices. The numerical technique is based on the minimization of the sum of residuals obtained by comparing accurate experimental data with a generalized theoretical model. The analysis used in the present study is based on Heine's model and takes the interfacial charges into account. The terminal characteristics of Au-Si Schottky-barrier devices are studied and analyzed. Information regarding interface state density, barrier height, etc., is obtained by using the optimization procedure in conjunction with the current-voltage and capacitance-voltage characteristics of these devices. Consistent values for the device parameters have been obtained through the utilization of the optimization technique.