Abstract:
The structure and principles of a new nonvolatile charge storage device are described. The Floating Si-gate Channel Corner Avalanche Transition (FCAT) memory device is an...Show MoreMetadata
Abstract:
The structure and principles of a new nonvolatile charge storage device are described. The Floating Si-gate Channel Corner Avalanche Transition (FCAT) memory device is an n-channel MOS transistor with a floating gate. The p+regions are placed outside the channel area by aligning them with the floating gate and are adjacent to the diffused n+source and/or drain regions. This device can operate in the write/erase modes under low-voltage (12 V) and high-speed (< 1 ms) conditions using only a pair of positive pulses. This is achieved with a novel avalanche transition at the channel corner through a relatively thin (4-6 nm thick) oxide under the open-drain condition.
Published in: IEEE Transactions on Electron Devices ( Volume: 26, Issue: 6, June 1979)