Abstract:
The emitter-base peripheral (sidewall) capacitance of double-diffused silicon bipolar transistors is computed at zero bias. Results are presented in such a way as to prov...Show MoreMetadata
Abstract:
The emitter-base peripheral (sidewall) capacitance of double-diffused silicon bipolar transistors is computed at zero bias. Results are presented in such a way as to provide useful design data.
Published in: IEEE Transactions on Electron Devices ( Volume: 26, Issue: 5, May 1979)