Radiation-hardened MNOS RAM technology

Development of a fast writing MNOS memory transistor along with a compatible hardened oxide peripheral transistor has led to successful fabrication of radiation-hardened MNOS RAM circuits. Using a 2.8-µs write cycle and 1.0-µs access time, 24-h retention and 10
¹¹
write cycle endurance have been demonstrated on a 256-bit MNOS RAM.