Abstract:
The dielectric behavior of thermally grown SiO2was examined using Si-SiO2-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing char...Show MoreMetadata
Abstract:
The dielectric behavior of thermally grown SiO2was examined using Si-SiO2-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing charge-carrier concentration. The relaxation process is characterized by activation energies of 29-32 kcal/mole; this, together with the considerably higher loss measured in specimens contaminated with Na2CO3, suggests sodium as the carrier source.
Published in: IEEE Transactions on Electron Devices ( Volume: 17, Issue: 11, November 1970)