Correct biasing rules for virtual DG mode operation in SOI-MOSFETs

The appropriate biasing rules for virtual double-gate (DG) operation of silicon-on-insulator (SOI)-MOSFETs are investigated. The cause for the optimistic subthreshold swing, achieved by the conventional biasing rule, is discussed and a correct methodology is proposed. Furthermore, we select the proper threshold voltages for the virtual DG operation based on the condition that both interfaces are simultaneously inverted.