An efficient analytical approach for extracting the emitter inductance of collector-up HBTs

An efficient analytical parameter-extraction approach for the emitter inductance in a hybrid-/spl pi/ equivalent circuit of collector-up heterojunction bipolar transistors (HBTs) is developed for the first time. A full set of elements is derived unambiguously from impedance and admittance formulation. The good agreement between measured and simulated S-parameters ensures the accuracy of this method.