I. Introduction
The reduction of gate oxide thickness has been systematically used as an essential ingredient for the suppression of short channel effects, hence for the transistor downscaling in the evolution of MOS technologies [1]–[3].
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The reduction of gate oxide thickness has been systematically used as an essential ingredient for the suppression of short channel effects, hence for the transistor downscaling in the evolution of MOS technologies [1]–[3].
IEEE Transactions on Electron Devices
Published: 2006
2017 International Applied Computational Electromagnetics Society Symposium (ACES)
Published: 2017
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