Abstract:
This paper suggests the use of high-voltage tunneling bursts for (virtually) SILC-free current injection in ultra-thin MOS structures and indicates the possibility of fas...Show MoreMetadata
Abstract:
This paper suggests the use of high-voltage tunneling bursts for (virtually) SILC-free current injection in ultra-thin MOS structures and indicates the possibility of fast programming of tunnel-based nonvolatile memories.
Published in: IEEE Transactions on Electron Devices ( Volume: 46, Issue: 7, July 1999)
DOI: 10.1109/16.772499
