A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique

A 1.9GHz low noise amplifier(LNA) is implemented with SiGe BiCMOS process using a modified cascode structure. In order to achieve high linearity and low NF at the same time, the phase of IM3 (3
^rd
order inter-modulation) in a common emitter amplifier is derived and the new IM3 cancellation method is proposed. The measurement results of the LNA at 1930MHz are gain of 16.9dB, noise figure of 1.5dB, and OIP3 of 27.7dBm with a single 2.7V supply. It consumes only 4.4mA