Nanometer Scale InGaAs HEMT Technology for Ultra High Speed IC

We have successfully fabricated various nanometer scale InGaAs HEMTs based on novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30 nm InGaAs HEMTs with excellent f
_T
exceeding 400 GHz. Based on nanometer scale InGaAs HEMT technology, several high performance integrated circuits have been successfully fabricated, such as 77 GHz MMIC chipsets for automotive car radar application and 40 Gb/s digital circuits