Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications

We have studied the suitability of nanometer-scale In
_0.7
Ga
_0.3
As HEMTs as a high-speed, low-power logic technology for beyond-CMOS applications. To this end, we have fabricated 50-150 nm gate length In
_0.7
Ga
_0.3
As HEMTs with different gate stack designs. The 50 nm HEMTs exhibit I
_ON
/I
_OFF
ratios in excess of 10
⁵
and DIBL less than 90 mV/dec. Compared with state-of-the-art Si MOSFETs, the non-optimized 50 nm In
_0.7
Ga
_0.3
As HEMTs provide equivalent highspeed performance with 15 times lower DC power dissipation and at least 2.7 times higher f
_T
at equivalent power dissipation level. In the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs HEMTs hold considerable promise