Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

Non-uniformity of the dielectric properties of high-/ spl kappa/ material due to random grain orientation and phase separation will lead to variation in characteristics between different devices. Here we present a model for phase separated high-/ spl kappa/ dielectrics and investigate, by means of 3D numerical device simulation, the intrinsic parameter fluctuations which result from this structural non-uniformity.