Reliability model for predicting long-term DC/RF performance in GaAs PHEMTs

Based on a three-temperature elevated temperature lifetest, a reliability model was developed to predict the DC/RF performance in 0.15 /spl mu/m GaAs PHEMTs during the mission. The reliability model was empirically derived based on the linear relationship of /spl Delta/Idss (%) versus /spl radic/t, where t is the elapsed stress time , and Arrhenius model of slopes extracted from the experimental results of /spl Delta/Idss (%) versus /spl radic/t of a three-temperature lifetest. The reliability allows the prediction of DC/RF performance in 0.15 /spl mu/m GaAs PHEMTs by the end of life (EOL), which is crucial for the defense and space applications.