Boltzmann's kinetic equation solution for polycrystalline semiconductor

The calculation of potential barriers at grain boundaries in polycrystalline semiconductors appearing under electric field is considered. On the basis of solution for Boltzmann's kinetic equation the expression for the relaxation time for carriers scattering on disordered system of the barriers is derived. The approach for calculation of current-voltage characteristic in nonlinear approximation for polycrystalline semiconductor is developed.