Cryogenic performance of a monolithic W-band amplifier using picosecond optoelectric technique

Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-state amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.<
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