A voltage tunable 35 GHz monolithic GaAs FECTED oscillator

Monolithically integrated FECTED (field-effect controlled transferred electron device) oscillators have been fabricated with high yield, high reliability, and precise frequency control. With unoptimized circuits, 12 mW with 1.4% efficiency in CW (continuous wave) operation and 25 mW with 2% efficiency in pulsed operation have been obtained. These results represent the highest power output and efficiency yet for monolithic TED and FET oscillator in this frequency range.<
>