Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers

The demonstration of an optimized strain compensated multiple-quantum-well (MQW) active region for use in 1.3-μm wavelength lasers is described. Utilizing narrow bandgap tensile-strained InGaAsP instead of wide bandgap InGaP barriers in strain-compensated lasers, we observe a reduction in threshold current density (Jth) from 675 to 310 A/cm
²
and in T
₀
from 75 K to 65 K for 2-mm long seven quantum-well devices. Additionally, the lowest reported Jth for MBE grown 1.3-μm wavelength lasers of 120 A/cm
²
for single-quantum-well (SQW) 45-mm-long lasers was attained.