4.5 kV IGBT junction termination technique using the SIPOS RESURF structure

In order to obtain high voltage and high reliability devices, the semi-insulating polycrystalline silicon (SIPOS) film and reduced surface field (RESURF) structure are selected from several planar junction termination techniques. A 4.5 kV IGBT was realized using the SIPOS RESURF structure with some optimizations. The termination structure is optimized for high voltage by the RESURF length and the boron ion implantation dosage of the RESURF layer. The SIPOS film is optimized to reduce transient voltage-induced leakage current (TVIC) and to obtain high reliability. As a result, a 5.0 kV static blocking voltage IGBT without TVIC is realized using a 525 /spl mu/m thickness/450 /spl Omega/cm resistivity substrate.