Abstract:
4H-SiC p-n diodes with an active area of 1 mm/sup 2/ and up to 3 kV blocking voltage have been fabricated, characterized and compared to simulations. The static forward c...Show MoreMetadata
Abstract:
4H-SiC p-n diodes with an active area of 1 mm/sup 2/ and up to 3 kV blocking voltage have been fabricated, characterized and compared to simulations. The static forward characteristics demonstrate the expected forward power loss with a negative temperature coefficient. The diodes exhibit a stable avalanche breakdown, showing a small positive temperature coefficient (0.3 V/K). The turn-on switching behaviour shows a relatively small voltage overshoot as compared to silicon diodes. The turn-off resembles that of a Schottky diode. In both cases, the dynamics can be attributed to a rapid recombination of the storage charge, even under high forward injection conditions. Numerical simulations may point to a local lifetime reduction at the p-n junction.
Published in: Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
Date of Conference: 03-06 June 1998
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-4752-8
Print ISSN: 1063-6854