Fabrication of resonant interband tunneling diode using resistless lithography and selective area epitaxy

InAs and InAs/GaSb/AlSb based resonant interband tunneling diodes are grown selectively in open windows on patterned GaAs substrates. The patterning is carried out by using a recently discovered resistless process wherein the GaAs surface is modified in the light exposed regions into forming a stable gallium oxide mask that can withstand InAs selective growth conditions. The one-step process used here replaces multi-step processes typically used to pattern the silicon nitride or oxide conventionally used as a mask for selective growth. It brings about many advantages such as cleanliness, reduction in cycle time, and improved compatibility with cluster tools.