A comparative analysis of CMOS low noise amplifiers for RF applications

Four CMOS RF low noise amplifier (LNA) circuits have been analyzed. These analyses include the effect of induced gate noise for the MOSFET. The noise factor contribution from each noise source is derived and these circuits are then compared for a minimum noise factor. The MOSIS HP 0.35 /spl mu/m and 0.8 /spl mu/m CMOS technologies have been used for performance comparisons. An automatic synthesis system for LNA design is also described.