Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.