Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique

This paper reports the effects of high temperature on high-frequency/high-speed field effect transistors (FETs), particularly GaAs-based MESFETs and HEMTs. The high-temperature electronic technique (HTET) was employed to stabilize and improve the performance of these devices at high temperatures. This work focuses on detailed high-temperature experiments of high-frequency scattering parameters of various transistors. Comparable gain level to that obtained at room temperature was achieved at elevated temperature through the use of the HTET.