20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications

A photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has been fabricated from metal-organic molecular beam epitaxy (MOMBE) material. The fiber-pigtailed module has measured sensitivities of -20.4 dBm and -17.0 dBm for data rates of 10 Gb/s and 20 Gb/s, respectively, at a bit-error-rate of 1×10/sup -9/. High-speed operation has been achieved with modest (3 μm) device dimensions. These results are the best ever reported for an OEIC photoreceiver at these speeds.