Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators

We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low as V/sub /spl pi///spl times/L=0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.<>