Reliability studies of gain-guided 0.85 μm GaAs/AlGaAs quantum well surface emitting lasers

A reliability study of gain-guided 0.85 μm GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.