Extremely high power 1.48 μm GaInAsP/InP GRIN-SCH strained MQW lasers

A record CW output power of 360 mW at 25/spl deg/C was achieved by investigating the structure of optical confinement layer in 1.48 μm GRIN-SCH MQW lasers. It is experimentally demonstrated that the use of a wide bandgap and thin SCH layer gives a high differential quantum efficiency without expense of threshold current. Low driving currents, 195 mA for 100 mW, 450 mA for 200 mW and 890 mA for 300 mW, were obtained in the optimized cavity lengths.