108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors

Connections to bulk bias tees and various mismatched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7- mu m*7- mu m photodiodes show usable electrical bandwidths exceeding 100 GHz.<
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